Invention Grant
- Patent Title: Semiconductor device including multiple insulating films
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Application No.: US13371524Application Date: 2012-02-13
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Publication No.: US08525183B2Publication Date: 2013-09-03
- Inventor: Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosure , Saishi Fujikawa
- Applicant: Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosure , Saishi Fujikawa
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2002-112151 20020415
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/15 ; H01L31/036 ; H01L29/10 ; H01L31/0376 ; H01L31/20 ; H01L29/76 ; H01L31/112 ; H01L31/062 ; H01L31/113 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
Public/Granted literature
- US08643021B2 Semiconductor device including multiple insulating films Public/Granted day:2014-02-04
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