Invention Grant
- Patent Title: Shallow trench isolation structure and method for forming the same
- Patent Title (中): 浅沟隔离结构及其形成方法
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Application No.: US13132068Application Date: 2011-01-27
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Publication No.: US08525188B2Publication Date: 2013-09-03
- Inventor: Huicai Zhong , Qingqing Liang , Haizhou Yin
- Applicant: Huicai Zhong , Qingqing Liang , Haizhou Yin
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Vierra Magen Marcus LLP
- Priority: CN201010552318 20101119
- International Application: PCT/CN2011/070687 WO 20110127
- International Announcement: WO2012/065369 WO 20120524
- Main IPC: H01L31/0312
- IPC: H01L31/0312 ; H01L29/00 ; H01L29/76 ; H01L29/94 ; H01L31/062
Abstract:
The invention provides a STI structure and method for forming the same. The STI structure includes a semiconductor substrate; a first trench embedded in the semiconductor substrate and filled up with a first dielectric layer; and a second trench formed on a top surface of the semiconductor substrate and interconnected with the first trench, wherein the second trench is filled up with a second dielectric layer, a top surface of the second dielectric layer is flushed with that of the semiconductor substrate, and the second trench has a width smaller than that of the first trench. The invention reduces dimension of divots and improves performance of the semiconductor device.
Public/Granted literature
- US20120126245A1 SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2012-05-24
Information query
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