Invention Grant
- Patent Title: Ultraviolet light emitting diode devices and methods for fabricating the same
- Patent Title (中): 紫外发光二极管装置及其制造方法
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Application No.: US13262049Application Date: 2009-08-26
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Publication No.: US08525198B2Publication Date: 2013-09-03
- Inventor: Yue Hao , Ling Yang , Xiaohua Ma , Xiaowei Zhou , Peixian Li
- Applicant: Yue Hao , Ling Yang , Xiaohua Ma , Xiaowei Zhou , Peixian Li
- Applicant Address: CN Xi'an
- Assignee: Xidian University
- Current Assignee: Xidian University
- Current Assignee Address: CN Xi'an
- Agency: Workman Nydegger
- Priority: CN200910021761 20090331; CN200910021764 20090331; CN200910021778 20090331; CN200910021779 20090331; CN200910021793 20090331; CN200910021794 20090331
- International Application: PCT/CN2009/073519 WO 20090826
- International Announcement: WO2010/111854 WO 20101007
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.
Public/Granted literature
- US20120018753A1 ULTRAVIOLET LIGHT EMITTING DIODE DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2012-01-26
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