Invention Grant
US08525198B2 Ultraviolet light emitting diode devices and methods for fabricating the same 有权
紫外发光二极管装置及其制造方法

  • Patent Title: Ultraviolet light emitting diode devices and methods for fabricating the same
  • Patent Title (中): 紫外发光二极管装置及其制造方法
  • Application No.: US13262049
    Application Date: 2009-08-26
  • Publication No.: US08525198B2
    Publication Date: 2013-09-03
  • Inventor: Yue HaoLing YangXiaohua MaXiaowei ZhouPeixian Li
  • Applicant: Yue HaoLing YangXiaohua MaXiaowei ZhouPeixian Li
  • Applicant Address: CN Xi'an
  • Assignee: Xidian University
  • Current Assignee: Xidian University
  • Current Assignee Address: CN Xi'an
  • Agency: Workman Nydegger
  • Priority: CN200910021761 20090331; CN200910021764 20090331; CN200910021778 20090331; CN200910021779 20090331; CN200910021793 20090331; CN200910021794 20090331
  • International Application: PCT/CN2009/073519 WO 20090826
  • International Announcement: WO2010/111854 WO 20101007
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Ultraviolet light emitting diode devices and methods for fabricating the same
Abstract:
A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.
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