Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US13362231Application Date: 2012-01-31
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Publication No.: US08525209B2Publication Date: 2013-09-03
- Inventor: Hwan Hee Jeong
- Applicant: Hwan Hee Jeong
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0072184 20080724
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.
Public/Granted literature
- US20120126278A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2012-05-24
Information query
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