A vertical semiconductor light emitting device which can alleviate a concentration of current inside a semiconductor film without impairing the electrical connection between an ohmic electrode and the semiconductor film. The semiconductor light emitting device includes the semiconductor film in contact with a support; a first electrode for partially covering the surface of the semiconductor film opposite to the contact surface with the support; and a second electrode provided on the contact surface side of the semiconductor film with the support. The second electrode includes first and second transparent electrodes made of the mutually same metal oxide transparent electrical conductor and electrically connected to each other, and the second transparent electrode is located to be opposed to the first electrode with the semiconductor film interposed therebetween and has a higher contact resistance with the semiconductor film than the first transparent electrode does.