Invention Grant
- Patent Title: Light-emitting diode integration scheme
- Patent Title (中): 发光二极管集成方案
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Application No.: US13269968Application Date: 2011-10-10
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Publication No.: US08525216B2Publication Date: 2013-09-03
- Inventor: Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
- Applicant: Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.
Public/Granted literature
- US20120025222A1 Light-Emitting Diode Integration Scheme Public/Granted day:2012-02-02
Information query
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