Invention Grant
- Patent Title: Process for forming a planar diode using one mask
-
Application No.: US11090708Application Date: 2005-03-25
-
Publication No.: US08525222B2Publication Date: 2013-09-03
- Inventor: Benson Wang , Kevin Lu , Warren Chiang , Max Chen
- Applicant: Benson Wang , Kevin Lu , Warren Chiang , Max Chen
- Applicant Address: US NY Hauppauge
- Assignee: Vishay General Semiconductor LLC
- Current Assignee: Vishay General Semiconductor LLC
- Current Assignee Address: US NY Hauppauge
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer; Karin L. Williams
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
Public/Granted literature
- US20060214184A1 Process for forming a planar diode using one mask Public/Granted day:2006-09-28
Information query
IPC分类: