Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11511293Application Date: 2006-08-29
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Publication No.: US08525225B2Publication Date: 2013-09-03
- Inventor: Hiroshi Kambayashi , Nariaki Ikeda , Seikoh Yoshida
- Applicant: Hiroshi Kambayashi , Nariaki Ikeda , Seikoh Yoshida
- Applicant Address: JP Tokyo
- Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-255603 20050902
- Main IPC: H01L29/739
- IPC: H01L29/739

Abstract:
A semiconductor device includes a plurality of electrodes arranged on a compound semiconductor layer grown on a substrate, and a surface protection film that protects a surface of a semiconductor layer on the compound semiconductor layer between the electrodes. A refractive index of the surface protection film is controlled so that a stress caused by the surface protection film on the surface of the semiconductor layer is minimized.
Public/Granted literature
- US20070051979A1 Semiconductor device Public/Granted day:2007-03-08
Information query
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