Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12299542Application Date: 2007-05-07
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Publication No.: US08525229B2Publication Date: 2013-09-03
- Inventor: Yasuhiro Okamoto , Yuji Ando , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
- Applicant: Yasuhiro Okamoto , Yuji Ando , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-129322 20060508
- International Application: PCT/JP2007/000482 WO 20070507
- International Announcement: WO2007/129471 WO 20071115
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/778
Abstract:
A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.
Public/Granted literature
- US20100230684A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-16
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