Invention Grant
- Patent Title: Multiplying pattern density by single sidewall imaging transfer
- Patent Title (中): 通过单侧壁成像转移乘以图案密度
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Application No.: US13552205Application Date: 2012-07-18
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Publication No.: US08525235B2Publication Date: 2013-09-03
- Inventor: Kangguo Cheng , Bruce B. Doris , Ying Zhang
- Applicant: Kangguo Cheng , Bruce B. Doris , Ying Zhang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis Percello
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L23/58
Abstract:
A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed.
Public/Granted literature
- US20120280283A1 MULTIPLYING PATTERN DENSITY BY SINGLE SIDEWALL IMAGING TRANSFER Public/Granted day:2012-11-08
Information query
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