Invention Grant
- Patent Title: Non-volatile memory device having variable resistance element
- Patent Title (中): 具有可变电阻元件的非易失性存储器件
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Application No.: US13462844Application Date: 2012-05-03
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Publication No.: US08525247B2Publication Date: 2013-09-03
- Inventor: Chan-Jin Park , Hyun-Su Ju , In-Gyu Baek
- Applicant: Chan-Jin Park , Hyun-Su Ju , In-Gyu Baek
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0066052 20110704
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L23/053 ; H01L23/12 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A non-volatile memory device includes a lower molding layer, a horizontal interconnection line on the lower molding layer, an upper molding layer on the horizontal interconnection line, pillars extending vertically through the upper molding layer, the horizontal interconnection line, and the lower molding layer, and a buffer layer interposed between the pillars and the molding layers. The device also includes variable resistance material and a diode layer interposed between the pillars and the horizontal interconnection line.
Public/Granted literature
- US20130009122A1 NON-VOLATILE MEMORY DEVICE HAVING VARIABLE RESISTANCE ELEMENT AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-01-10
Information query
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