Invention Grant
- Patent Title: Memory cell comprising a floating body, a channel region, and a diode
- Patent Title (中): 存储单元包括浮体，沟道区和二极管
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Application No.: US13717465Application Date: 2012-12-17
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Publication No.: US08525248B2Publication Date: 2013-09-03
- Inventor: Chandra Mouli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
Some embodiments include memory cells that contain floating bodies and diodes. The diodes may be gated diodes having sections doped to a same conductivity type as the floating bodies, and such sections of the gated diodes may be electrically connected to the floating bodies. The floating bodies may be adjacent channel regions, and spaced from the channel regions by a dielectric structure. The dielectric structure of a memory cell may have a first portion between the floating body and the diode, and may have a second portion between the floating body and the channel region. The first portion may be more leaky to charge carriers than the second portion. The diodes may be formed in semiconductor material that is different from a semiconductor material that the channel regions are in. The floating bodies may have bulbous lower regions. Some embodiments include methods of making memory cells.
Public/Granted literature
- US20130126908A1 Memory Cells, And Methods Of Forming Memory Cells Public/Granted day:2013-05-23
Information query
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