Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and method of fabricating the same
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Application No.: US13233788Application Date: 2011-09-15
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Publication No.: US08525252B2Publication Date: 2013-09-03
- Inventor: Kenichiro Toratani , Masayuki Tanaka , Kazuhiro Matsuo
- Applicant: Kenichiro Toratani , Masayuki Tanaka , Kazuhiro Matsuo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2011-119467 20110527
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.
Public/Granted literature
- US20120299083A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-11-29
Information query
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