Invention Grant
US08525255B2 Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
有权
沟槽MOSFET具有沟槽底部的氧化物作为终端
- Patent Title: Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
- Patent Title (中): 沟槽MOSFET具有沟槽底部的氧化物作为终端
-
Application No.: US13171965Application Date: 2011-06-29
-
Publication No.: US08525255B2Publication Date: 2013-09-03
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask.
Public/Granted literature
- US20110316075A1 TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION Public/Granted day:2011-12-29
Information query
IPC分类:
