Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13050539Application Date: 2011-03-17
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Publication No.: US08525274B2Publication Date: 2013-09-03
- Inventor: Yoshiharu Takada
- Applicant: Yoshiharu Takada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2010-184439 20100819
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes a substrate, a semiconductor, a first surface passivation film including nitride, a second passivation film, a gate electrode, and a source electrode and a drain electrode. The semiconductor layer is provided on the substrate. The first surface passivation film including nitride is provided on the semiconductor layer and has at least two openings. The second surface passivation film covers an upper surface and a side surface of the first surface passivation film. The gate electrode is provided on a part of the second surface passivation film. The source electrode and the drain electrode are respectively provided on the two openings. In addition, the second surface passivation film includes a material of which melting point is higher than the melting points of the gate electrode, the source electrode, and the drain electrode.
Public/Granted literature
- US20120043591A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-02-23
Information query
IPC分类:
