Invention Grant
- Patent Title: Z-axis semiconductor fluxgate magnetometer
- Patent Title (中): Z轴半导体磁通门磁力计
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Application No.: US13276391Application Date: 2011-10-19
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Publication No.: US08525281B2Publication Date: 2013-09-03
- Inventor: Anuraag Mohan , Peter J. Hopper
- Applicant: Anuraag Mohan , Peter J. Hopper
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A z-axis fluxgate magnetometer is formed in a semiconductor wafer fabrication sequence, which significantly reduces the size and cost of the fluxgate magnetometer. The semiconductor wafer fabrication sequence forms a vertical magnetic core structure, a first wire structure wound around the magnetic core structure, and a second wire structure wound around the magnetic core structure.
Public/Granted literature
- US20130099334A1 Z-Axis Semiconductor Fluxgate Magnetometer Public/Granted day:2013-04-25
Information query
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