Invention Grant
US08525285B2 Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture
有权
具有凹槽结构以防止在制造期间模制树脂在光电二极管的光接收区域上溢出的半导体器件
- Patent Title: Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture
- Patent Title (中): 具有凹槽结构以防止在制造期间模制树脂在光电二极管的光接收区域上溢出的半导体器件
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Application No.: US13408368Application Date: 2012-02-29
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Publication No.: US08525285B2Publication Date: 2013-09-03
- Inventor: Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
- Applicant: Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2008-084568 20080327
- Main IPC: H01L31/0203
- IPC: H01L31/0203
Abstract:
A semiconductor device having a substrate including a photodiode; a resin layer formed on an upper surface of the substrate, the resin layer not covering a light receiving region of the photodiode, the resin layer including at least one groove surrounding the light receiving region; and a molding resin portion formed by mold-sealing the photodiode with the resin layer thereon so as not to cover the light receiving region.
Public/Granted literature
- US20120161271A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-06-28
Information query
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