Invention Grant
US08525286B2 Method of making wafer structure for backside illuminated color image sensor
有权
制造背面照明彩色图像传感器的晶圆结构的方法
- Patent Title: Method of making wafer structure for backside illuminated color image sensor
- Patent Title (中): 制造背面照明彩色图像传感器的晶圆结构的方法
-
Application No.: US12537167Application Date: 2009-08-06
-
Publication No.: US08525286B2Publication Date: 2013-09-03
- Inventor: Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
- Applicant: Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.
Public/Granted literature
- US20090294886A1 METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR Public/Granted day:2009-12-03
Information query
IPC分类:
