Semiconductor device

Invention Grant

US08525294B2 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US13119366

Application Date: 2009-07-02
Publication No.: US08525294B2

Publication Date: 2013-09-03
Inventor: Akira Tada , Hiroki Tanabe , Yoshinori Okada , Ikuo Kudo
Applicant: Akira Tada , Hiroki Tanabe , Yoshinori Okada , Ikuo Kudo
Applicant Address: JP Kanagawa
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: McDermott Will & Emery LLP
Priority: JP2008-239211 20080918
International Application: PCT/JP2009/062099 WO 20090702
International Announcement: WO2010/032534 WO 20100325
Main IPC: H01L21/822
IPC: H01L21/822

Abstract:

A package-on-package includes a semiconductor package, and a coil provided at the semiconductor package. The semiconductor package includes a bottom face, and a solder ball protruded from the bottom face. An axis of the coil is inclined with respect to the normal line of the bottom face.

Abstract(Chinese):

封装封装包括半导体封装和设置在半导体封装处的线圈。半导体封装包括底面和从底面突出的焊球。线圈的轴线相对于底面的法线倾斜。

Public/Granted literature

US20110272781A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-11-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）