Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13682591Application Date: 2013-01-04
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Publication No.: US08525295B2Publication Date: 2013-09-03
- Inventor: Yasutaka Nakashiba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-148164 20080605
- Main IPC: H01L27/08
- IPC: H01L27/08
Abstract:
A semiconductor device includes a substrate, a transistor formed over the substrate, insulating layers formed over the substrate, a multilayer wiring formed in the insulating layers, a first inductor formed in the insulating layers, and a second inductor formed over the first inductor and overlapping the first inductor. The insulating layers contain a silicon, wherein at least the two insulating layers are formed between the first inductor and the second inductor, and the first inductor and the second inductor are a spiral wiring pattern.
Public/Granted literature
- US20130175636A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-07-11
Information query
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