A phase change memory device having a 3-D stack structure and a fabrication method for making the same are presented. The phase change memory device includes a semiconductor substrate, a word line structure and one or more phase change structures. The word line structure extends in one first direction on the semiconductor substrate. The one or more phase change structures extend mutually in parallel from one sidewall of the word line structure. The, the memory cell including a switching device, one side of the switching device contacted with the one sidewall of the word line structure, a heating electrode formed on the other side portion of the switching device, and a phase change pattern, one sidewall of the phase change pattern contacted with the heating electrode.