Invention Grant
- Patent Title: Semiconductor power module and method of manufacturing the same
-
Application No.: US13247105Application Date: 2011-09-28
-
Publication No.: US08525315B2Publication Date: 2013-09-03
- Inventor: Toshio Hanada
- Applicant: Toshio Hanada
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin Berdo, P.C.
- Priority: JP2010-219030 20100929
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block.
Public/Granted literature
- US20120074556A1 SEMICONDUCTOR POWER MODULE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-03-29
Information query
IPC分类:
