Invention Grant
- Patent Title: Power device package structure
- Patent Title (中): 功率器件封装结构
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Application No.: US13182469Application Date: 2011-07-14
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Publication No.: US08525328B2Publication Date: 2013-09-03
- Inventor: Jiin-Shing Perng , Min-Lin Lee , Shinn-Juh Lai , Huey-Ru Chang
- Applicant: Jiin-Shing Perng , Min-Lin Lee , Shinn-Juh Lai , Huey-Ru Chang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW99146763A 20101230
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.
Public/Granted literature
- US20120168839A1 POWER DEVICE PACKAGE STRUCTURE Public/Granted day:2012-07-05
Information query
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