Invention Grant
US08525330B2 Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer
有权
用于连接半导体元件和框架的连接构件，由Al基层和设置在Al基层的表面上的第一和第二Zn基层形成
- Patent Title: Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer
- Patent Title (中): 用于连接半导体元件和框架的连接构件，由Al基层和设置在Al基层的表面上的第一和第二Zn基层形成
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Application No.: US13382633Application Date: 2010-08-30
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Publication No.: US08525330B2Publication Date: 2013-09-03
- Inventor: Masahide Okamoto , Osamu Ikeda , Yuki Murasato
- Applicant: Masahide Okamoto , Osamu Ikeda , Yuki Murasato
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-207684 20090909; JP2009-209957 20090911
- International Application: PCT/JP2010/005313 WO 20100830
- International Announcement: WO2011/030517 WO 20110317
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.
Public/Granted literature
- US20120098134A1 CONNECTING MATERIAL, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-04-26
Information query
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