Invention Grant
- Patent Title: Semiconductor device having semiconductor substrate, and method of manufacturing the same
- Patent Title (中): 具有半导体衬底的半导体器件及其制造方法
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Application No.: US13230395Application Date: 2011-09-12
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Publication No.: US08525332B2Publication Date: 2013-09-03
- Inventor: Takeshi Matsumoto
- Applicant: Takeshi Matsumoto
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-069015 20090319
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44
Abstract:
A semiconductor device includes a semiconductor substrate having a plurality of electrode pads, a protective film covering the upper surface of the semiconductor substrate and having an opening so that the electrode pad is exposed therethrough, a metal film formed on the electrode pad exposed through the opening, and a bump formed on the metal film. The metal film includes a plurality of grooves radially formed from the center thereof toward the periphery thereof.
Public/Granted literature
- US20110316154A1 SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-12-29
Information query
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