Invention Grant
- Patent Title: Semiconductor on semiconductor substrate multi-chip-scale package
- Patent Title (中): 半导体衬底多芯片级封装
-
Application No.: US12799530Application Date: 2010-04-27
-
Publication No.: US08525334B2Publication Date: 2013-09-03
- Inventor: Stuart Cardwell
- Applicant: Stuart Cardwell
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Some exemplary embodiments of a multi-chip semiconductor package utilizing a semiconductor substrate and related method for making such a semiconductor package have been disclosed. One exemplary embodiment comprises a first semiconductor device including, on a surface thereof, a first patterned dielectric layer, a conductive redistribution layer, a second patterned dielectric layer, and a second semiconductor device. The conductive redistribution layer connects to a first and a second patterned conductive attach material for connecting the first and second semiconductor devices to provide coplanar electrical connections for mounting on a printed circuit board. In one embodiment, the first semiconductor device is a diode having anode and cathode contacts on an upper surface thereof, and the second semiconductor device is an IGBT.
Public/Granted literature
- US20110260322A1 "Semiconductor on semiconductor substrate multi-chip-scale package" Public/Granted day:2011-10-27
Information query
IPC分类: