Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
- Patent Title (中): 半导体封装及其制造方法
-
Application No.: US13349049Application Date: 2012-01-12
-
Publication No.: US08525336B2Publication Date: 2013-09-03
- Inventor: Pang-Chun Lin , Yueh-Ying Tsai , Yong-Liang Chen
- Applicant: Pang-Chun Lin , Yueh-Ying Tsai , Yong-Liang Chen
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW100137485A 20111017
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40

Abstract:
This disclosure provides a semiconductor package and a method of fabricating the same. The semiconductor package includes an insulating layer; a plurality of traces and connection pads disposed in the insulating layer and protruded from the insulating layer; a plurality of bumps formed on the plurality of traces; a semiconductor chip disposed on the bumps; and an encapsulant formed on the insulating layer to encapsulate the semiconductor chip, the plurality of bumps, traces and connection pads. When the encapsulant is formed, voids can be prevented from being generated in the traces and the connection pads and thus the yield of process is significantly increased.
Public/Granted literature
- US20130093086A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-04-18
Information query
IPC分类: