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Invention Grant
US08525350B2 Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps 有权
用于倒装芯片封装的易熔I / O互连系统和方法，涉及基板安装的柱形凸块

Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps
Abstract:
A semiconductor device has a semiconductor die with bond pads formed on a surface of the semiconductor die. A UBM is formed over the bond pads of the semiconductor die. A fusible layer is formed over the UBM. The fusible layer can be tin or tin alloy. A substrate has bond pads formed on a surface of the substrate. A plurality of stud bumps containing non-fusible material is formed over the bond pads on the substrate. Each stud bump includes a wire having a first end attached to the bond pad of the substrate and second end of uniform height electrically connected to the bond pad of the semiconductor die by reflowing the fusible layer or applying thermal compression bonding. An underfill material is deposited between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and substrate.
Abstract(Chinese):

半导体器件具有形成在半导体管芯的表面上的接合焊盘的半导体管芯。 在半导体管芯的接合焊盘上形成UBM。 在UBM上形成了可熔层。 易熔层可以是锡或锡合金。 衬底具有形成在衬底的表面上的接合焊盘。 在衬底上的接合焊盘上形成包含非易熔材料的多个柱状凸块。 每个柱形凸块包括具有连接到基板的接合焊盘的第一端和具有均匀高度的第一端的导线，该第二端通过回流可熔层或施加热压接而与半导体管芯的接合焊盘电连接。 在半导体管芯和衬底之间沉积底部填充材料。 密封剂沉积在半导体管芯和衬底上。

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