Invention Grant
- Patent Title: DC-DC converter and semiconductor chip
- Patent Title (中): DC-DC转换器和半导体芯片
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Application No.: US13032941Application Date: 2011-02-23
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Publication No.: US08525496B2Publication Date: 2013-09-03
- Inventor: Shouhei Kousai
- Applicant: Shouhei Kousai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-196498 20100902
- Main IPC: G05F1/00
- IPC: G05F1/00

Abstract:
A DC-DC converter including a first inductor connected between a second end of a first MOS transistor and an output terminal, a second inductor connected between a second end of a third MOS transistor and the output terminal, a first capacitor connected between the second MOS transistor and the third MOS transistor, a second capacitor connected between the fourth MOS transistor and the first MOS transistor and a third capacitor connected between the first MOS transistor and the third MOS transistor. Also included in the converter is a first resistor connected to a gate of the second MOS transistor, a second resistor connected to a gate of the fourth MOS transistor, and a first bias adjustment circuit which compares the output voltage with a preset first reference voltage and applies a first bias voltage to the resistors to make the output voltage equal to the first reference voltage.
Public/Granted literature
- US20120056606A1 DC-DC CONVERTER AND SEMICONDUCTOR CHIP Public/Granted day:2012-03-08
Information query
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