Invention Grant
US08525528B2 Method and device for evaluating electric performances of an FDSOI transistor
有权
用于评估FDSOI晶体管的电性能的方法和装置
- Patent Title: Method and device for evaluating electric performances of an FDSOI transistor
- Patent Title (中): 用于评估FDSOI晶体管的电性能的方法和装置
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Application No.: US12860253Application Date: 2010-08-20
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Publication No.: US08525528B2Publication Date: 2013-09-03
- Inventor: Xavier Garros , Laurent Brunet
- Applicant: Xavier Garros , Laurent Brunet
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0955895 20090828
- Main IPC: G01R27/26
- IPC: G01R27/26 ; G01R29/12 ; G01R31/12 ; G01R25/00 ; G01N27/60
Abstract:
A method for evaluating the electric performances of an FDSOI transistor, including the steps of: measuring capacitance and/or conductance of the FDSOI transistor, by applying a voltage VBG>0 on a substrate composed of semiconductor of the FDSOI transistor when the FDSOI transistor is NMOS or a voltage VBG
Public/Granted literature
- US20110050253A1 METHOD AND DEVICE FOR EVALUATING ELECTRIC PERFORMANCES OF AN FDSOI TRANSISTOR Public/Granted day:2011-03-03
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