Invention Grant
- Patent Title: Anti-ultraviolet memory device and fabrication method thereof
- Patent Title (中): 防紫外线记忆装置及其制造方法
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Application No.: US13115568Application Date: 2011-05-25
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Publication No.: US08526194B2Publication Date: 2013-09-03
- Inventor: Hwa-Hsiang Chang
- Applicant: Hwa-Hsiang Chang
- Applicant Address: TW Hsin Tien, Taipei County
- Assignee: Princeton Technology Corporation
- Current Assignee: Princeton Technology Corporation
- Current Assignee Address: TW Hsin Tien, Taipei County
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW99116784A 20100526
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H05K7/00 ; H01L23/02
Abstract:
The invention provides an anti-UV electronic device and fabrication method thereof. The anti-ultraviolet (anti-UV) electronic device includes an integrated circuit die, wherein the integrated circuit die has an ultraviolet (UV) light erasable memory; and an anti-UV light layer is formed on and covers the ultraviolet (UV) light erasable memory.
Public/Granted literature
- US20110292628A1 ANTI-ULTRAVIOLET MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2011-12-01
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