Invention Grant
- Patent Title: Semiconductor device with OTP memory cell
- Patent Title (中): 具有OTP存储单元的半导体器件
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Application No.: US13249524Application Date: 2011-09-30
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Publication No.: US08526210B2Publication Date: 2013-09-03
- Inventor: Tae Hoon Kim
- Applicant: Tae Hoon Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: WIlliam Park & Associates Patent Ltd.
- Priority: KR10-2010-0114712 20101117
- Main IPC: G11C17/08
- IPC: G11C17/08
Abstract:
A semiconductor device with an OTP memory cell includes a first MOS transistor having a first gate terminal connected to a first line, and a first terminal connected to a first node, a second MOS transistor having a second gate terminal connected to a second line, and a first terminal connected to the first node, and a third MOS transistor having a gate terminal connected to a three line, and a first terminal of the third MOS transistor connected to the first node.
Public/Granted literature
- US20120120707A1 SEMICONDUCTOR DEVICE WITH OTP MEMORY CELL Public/Granted day:2012-05-17
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