Invention Grant
- Patent Title: Memory device and manufacturing method the same
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Application No.: US13546013Application Date: 2012-07-11
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Publication No.: US08526216B2Publication Date: 2013-09-03
- Inventor: Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
- Applicant: Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-091318 20050328
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/00 ; H01L29/12

Abstract:
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
Public/Granted literature
- US20120273778A1 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME Public/Granted day:2012-11-01
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