A SRAM memory element comprises an influencing element which sets the state of the memory cells within the memory element on start-up to defined values. These defined values are set at the design stage such that on start-up the volatile memory contains firmware or other data. Dependent upon the implementation of the influencing element, the values of stored in the memory cells may be fixed or may subsequently be overwritten during operation of the device. The memory cell may comprise two cross-coupled inverters and the influencing element comprises at least one transistor arranged to connect the input to one of the inverters to ground or a power supply rail when voltage is applied to a controlling node of the transistor.