Invention Grant
- Patent Title: Phase change memory word line driver
- Patent Title (中): 相变存储器字线驱动器
-
Application No.: US13110399Application Date: 2011-05-18
-
Publication No.: US08526227B2Publication Date: 2013-09-03
- Inventor: Hong Beom Pyeon
- Applicant: Hong Beom Pyeon
- Applicant Address: CA Ottawa, Ontario
- Assignee: Mosaid Technologies Incorporated
- Current Assignee: Mosaid Technologies Incorporated
- Current Assignee Address: CA Ottawa, Ontario
- Agent Harvey Auerback
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.
Public/Granted literature
- US20110317482A1 PHASE CHANGE MEMORY WORD LINE DRIVER Public/Granted day:2011-12-29
Information query