Invention Grant
- Patent Title: Flash memory and memory cell programming method thereof
- Patent Title (中): 闪存及其存储单元编程方法
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Application No.: US13211339Application Date: 2011-08-17
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Publication No.: US08526240B2Publication Date: 2013-09-03
- Inventor: Chun-Yuan Lo , Wein-Town Sun
- Applicant: Chun-Yuan Lo , Wein-Town Sun
- Applicant Address: TW Hsinchu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A programming method includes the following steps. A preset programming voltage is applied to a memory cell to program the memory cell. A first verify voltage is applied to the memory cell to detect a programming result of the memory cell. A programming voltage applied on the memory cell is adjusted according to the programming result of the memory cell. A flash memory is also provided.
Public/Granted literature
- US20130044548A1 FLASH MEMORY AND MEMORY CELL PROGRAMMING METHOD THEREOF Public/Granted day:2013-02-21
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