Invention Grant
- Patent Title: Anti-fuse circuit
- Patent Title (中): 防熔丝电路
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Application No.: US13187533Application Date: 2011-07-21
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Publication No.: US08526244B2Publication Date: 2013-09-03
- Inventor: Ming-Chien Huang
- Applicant: Ming-Chien Huang
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G11C7/06
- IPC: G11C7/06

Abstract:
An anti-fuse circuit including a programmable module, a read module, and a control module is provided. The programmable module has a plurality of data cells. The read module is coupled to the programmable module. During a normal operation, the read module distinguishes which one or more of the data cells are stressed. The control module is coupled to the programmable module. During a stress operation, the control module controls each stressed data cell to be coupled to a high voltage, a low voltage, and a control voltage. The first end of each stressed data cells is coupled to the low voltage, the second end of each stressed data cells is coupled to the high voltage, and the control end of each stressed data cells is coupled to the control voltage during the stress operation.
Public/Granted literature
- US20130021854A1 ANTI-FUSE CIRCUIT Public/Granted day:2013-01-24
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