Invention Grant
US08527819B2 Data storage in analog memory cell arrays having erase failures
有权
具有擦除故障的模拟存储单元阵列中的数据存储
- Patent Title: Data storage in analog memory cell arrays having erase failures
- Patent Title (中): 具有擦除故障的模拟存储单元阵列中的数据存储
-
Application No.: US12677114Application Date: 2008-10-12
-
Publication No.: US08527819B2Publication Date: 2013-09-03
- Inventor: Ofir Shalvi , Shai Winter , Naftali Sommer , Dotan Sokolov
- Applicant: Ofir Shalvi , Shai Winter , Naftali Sommer , Dotan Sokolov
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- International Application: PCT/IL2008/001356 WO 20081012
- International Announcement: WO2009/050703 WO 20090423
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.
Public/Granted literature
- US20100199150A1 Data Storage In Analog Memory Cell Arrays Having Erase Failures Public/Granted day:2010-08-05
Information query
