Invention Grant
US08527841B2 Apparatus, system, and method for using multi-level cell solid-state storage as reduced-level cell solid-state storage 有权
使用多级单元固态存储作为低级单元固态存储的装置,系统和方法

  • Patent Title: Apparatus, system, and method for using multi-level cell solid-state storage as reduced-level cell solid-state storage
  • Patent Title (中): 使用多级单元固态存储作为低级单元固态存储的装置,系统和方法
  • Application No.: US13609527
    Application Date: 2012-09-11
  • Publication No.: US08527841B2
    Publication Date: 2013-09-03
  • Inventor: Robert WoodJea Woong Hyun
  • Applicant: Robert WoodJea Woong Hyun
  • Applicant Address: US UT Salt Lake City
  • Assignee: Fusion-Io, Inc.
  • Current Assignee: Fusion-Io, Inc.
  • Current Assignee Address: US UT Salt Lake City
  • Agency: Kunzler Law Group, PC
  • Main IPC: G11C29/00
  • IPC: G11C29/00
Apparatus, system, and method for using multi-level cell solid-state storage as reduced-level cell solid-state storage
Abstract:
A controller is used for an electronic memory device which has multi-level cell (MLC) memory elements. The individual MLC memory elements are capable of storing at least two bits. The controller includes a physical interface to couple the controller to the electronic memory device. The controller also includes a processing unit coupled to the physical interface. The processing unit operates the electronic memory device using a restricted number of programming states for a single data bit. The restricted number of programming states includes first and second states used to represent a most significant bit (MSB) of the at least two bits of data of the designated programming states.
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