Invention Grant
US08527915B2 Method and system for modifying doped region design layout during mask preparation to tune device performance
有权
在掩模准备期间修改掺杂区域设计布局以调整器件性能的方法和系统
- Patent Title: Method and system for modifying doped region design layout during mask preparation to tune device performance
- Patent Title (中): 在掩模准备期间修改掺杂区域设计布局以调整器件性能的方法和系统
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Application No.: US13286410Application Date: 2011-11-01
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Publication No.: US08527915B2Publication Date: 2013-09-03
- Inventor: Mei-Hsuan Lin , Ling-Sung Wang , Chih-Hsun Lin , Chih-Kang Chao
- Applicant: Mei-Hsuan Lin , Ling-Sung Wang , Chih-Hsun Lin , Chih-Kang Chao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
The present disclosure provides a method and system for modifying a doped region design layout during mask preparation to tune device performance. An exemplary method includes receiving an integrated circuit design layout designed to define an integrated circuit, wherein the integrated circuit design layout includes a doped feature layout; identifying an area of the integrated circuit for device performance modification, and modifying a portion of the doped feature layout that corresponds with the identified area of the integrated circuit during a mask preparation process, thereby providing a modified doped feature layout.
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