Invention Grant
- Patent Title: Ingan columnar nano-heterostructures for solar cells
- Patent Title (中): Ingan柱状纳米异质结构太阳能电池
-
Application No.: US12616634Application Date: 2009-11-11
-
Publication No.: US08529698B2Publication Date: 2013-09-10
- Inventor: Fernando A. Ponce , Rafael Garcia
- Applicant: Fernando A. Ponce , Rafael Garcia
- Applicant Address: US AZ Scottsdale
- Assignee: Arizona Board Of Regents For And On Behalf Of Arizona State University
- Current Assignee: Arizona Board Of Regents For And On Behalf Of Arizona State University
- Current Assignee Address: US AZ Scottsdale
- Agency: Fulbright & Jaworski L.L.P.
- Main IPC: C30B23/00
- IPC: C30B23/00
Abstract:
Methods, devices, and compositions of matter related to high efficiency InGaN-based photovoltaic devices. The disclosed synthesis of semiconductor heterostructures may be exploited to produce higher efficiency, longer lasting, photovoltaic cells.
Public/Granted literature
- US20100116333A1 InGaN Columnar Nano-Heterostructures For Solar Cells Public/Granted day:2010-05-13
Information query
