Invention Grant
US08529728B2 System and method for critical dimension reduction and pitch reduction
有权
关键尺寸减小和俯仰减小的系统和方法
- Patent Title: System and method for critical dimension reduction and pitch reduction
- Patent Title (中): 关键尺寸减小和俯仰减小的系统和方法
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Application No.: US12192077Application Date: 2008-08-14
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Publication No.: US08529728B2Publication Date: 2013-09-10
- Inventor: Robert Charatan
- Applicant: Robert Charatan
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306
Abstract:
A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A method of forming a feature is also disclosed.
Public/Granted literature
- US20120279656A9 SYSTEM AND METHOD FOR CRITICAL DIMENSION REDUCTION AND PITCH REDUCTION Public/Granted day:2012-11-08
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