Invention Grant
US08529777B2 Method of making a mask, method of patterning by using this mask and method of manufacturing a micro-device
有权
制造掩模的方法，使用该掩模的图案化方法和制造微型器件的方法
- Patent Title: Method of making a mask, method of patterning by using this mask and method of manufacturing a micro-device
- Patent Title (中): 制造掩模的方法，使用该掩模的图案化方法和制造微型器件的方法
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Application No.: US13230261Application Date: 2011-09-12
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Publication No.: US08529777B2Publication Date: 2013-09-10
- Inventor: Hisayoshi Watanabe , Hideyuki Yatsu , Takayuki Nishizawa , Masashi Sano , Hiromichi Umehara , Takayasu Kanaya , Tetsuji Hori
- Applicant: Hisayoshi Watanabe , Hideyuki Yatsu , Takayuki Nishizawa , Masashi Sano , Hiromichi Umehara , Takayasu Kanaya , Tetsuji Hori
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
The present invention relates to a method of making a mask for patterning a thin film. The method includes a step of forming an inorganic material, which is resolvable into alkali solution, on a substrate; a step of forming the inorganic material in a predetermined pattern; and a step of narrowing the inorganic material with the alkali solution to form the mask.
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