Invention Grant
- Patent Title: Process for improving the emission of electron field emitters
- Patent Title (中): 改善电子场发射体发射的方法
-
Application No.: US12258648Application Date: 2008-10-27
-
Publication No.: US08529798B2Publication Date: 2013-09-10
- Inventor: Robert Joseph Bouchard , Lap-Tap Andrew Cheng , David Herbert Roach , John Gerard Lavin
- Applicant: Robert Joseph Bouchard , Lap-Tap Andrew Cheng , David Herbert Roach , John Gerard Lavin
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01B1/00
- IPC: H01B1/00
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Public/Granted literature
- US20090104834A1 PROCESS FOR IMPROVING THE EMISSION OF ELECTRON FIELD EMITTERS Public/Granted day:2009-04-23
Information query
