Invention Grant
- Patent Title: Method for controlling threshold voltage of semiconductor element
- Patent Title (中): 半导体元件阈值电压控制方法
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Application No.: US12992073Application Date: 2009-05-11
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Publication No.: US08530246B2Publication Date: 2013-09-10
- Inventor: Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
- Applicant: Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2008-124859 20080512
- International Application: PCT/JP2009/059103 WO 20090511
- International Announcement: WO2009/139482 WO 20091119
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/336 ; H01L21/331 ; G01R31/26
Abstract:
A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.
Public/Granted literature
- US20110076790A1 METHOD FOR CONTROLLING THRESHOLD VOLTAGE OF SEMICONDUCTOR ELEMENT Public/Granted day:2011-03-31
Information query
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