Invention Grant
- Patent Title: Method for manufacturing light emitting diode
- Patent Title (中): 制造发光二极管的方法
-
Application No.: US13216246Application Date: 2011-08-24
-
Publication No.: US08530252B2Publication Date: 2013-09-10
- Inventor: Chao-Hsiung Chang , Chieh-Ling Chang
- Applicant: Chao-Hsiung Chang , Chieh-Ling Chang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: CN201010539600 20101111
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for manufacturing light emitting diodes includes steps of: providing a base have an upper conductive layer and a lower conductive layer on a top face and a bottom face thereof, respectively; forming a plurality of through holes in the base; defining a plurality of grooves to divide the upper and lower conductive layers into discrete strips; forming a connection layer on an inner circumferential face of each hole to connect the opposite strips of the upper and lower conductive layers; filling a supporting layer in an upper portion of each hole; forming a reinforcing layer on the supporting layer and the upper conductive layer; fixing chips on the reinforcing layer and electrically connecting the chips with the strips of the upper conductive layer; forming an encapsulant on the reinforcing layer; and cutting the base into individual LEDs along the holes.
Public/Granted literature
- US20120122256A1 METHOD FOR MANUFACTURING LIGHT EMITTING DIODE Public/Granted day:2012-05-17
Information query
IPC分类: