Invention Grant
US08530257B2 Band offset in alingap based light emitters to improve temperature performance
有权
基于Alingap的光发射器的带偏移以改善温度性能
- Patent Title: Band offset in alingap based light emitters to improve temperature performance
- Patent Title (中): 基于Alingap的光发射器的带偏移以改善温度性能
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Application No.: US13595837Application Date: 2012-08-27
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Publication No.: US08530257B2Publication Date: 2013-09-10
- Inventor: Ralph Herbert Johnson
- Applicant: Ralph Herbert Johnson
- Applicant Address: US CA Sunnyvale
- Assignee: Finisar Corporation
- Current Assignee: Finisar Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Maschoff Brennan
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.
Public/Granted literature
- US20120322184A1 BAND OFFSET IN ALINGAP BASED LIGHT EMITTERS TO IMPROVE TEMPERATURE PERFORMANCE Public/Granted day:2012-12-20
Information query
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