Invention Grant
- Patent Title: Radiation hardened integrated circuit
- Patent Title (中): 辐射硬化集成电路
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Application No.: US13286293Application Date: 2011-11-01
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Publication No.: US08530298B2Publication Date: 2013-09-10
- Inventor: Richard G. Roybal , Shariq Arshad , Shaoping Tang , James Fred Salzman
- Applicant: Richard G. Roybal , Shariq Arshad , Shaoping Tang , James Fred Salzman
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/70
Abstract:
A method of forming an integrated circuit (IC) includes providing a substrate having a topside semiconductor surface, wherein the topside semiconductor surface includes at least one of N+ buried layer regions and P+ buried layer regions. An epitaxial layer is grown on the topside semiconductor surface. Pwells are formed in the epitaxial layer. Nwells are formed in the epitaxial layer. NMOS devices are formed in and over the pwells, and PMOS devices are formed in and over the nwells.
Public/Granted literature
- US20130105904A1 RADIATION HARDENED INTEGRATED CIRCUIT Public/Granted day:2013-05-02
Information query
IPC分类:
