Invention Grant
- Patent Title: Memory cell with improved retention
- Patent Title (中): 记忆单元具有改善的保留
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Application No.: US12650561Application Date: 2009-12-31
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Publication No.: US08530310B2Publication Date: 2013-09-10
- Inventor: Lee Wee Teo , Chunshan Yin , Shyue Seng Tan , Chung Foong Tan , Jae Gon Lee , Elgin Quek , Purakh Raj Verma
- Applicant: Lee Wee Teo , Chunshan Yin , Shyue Seng Tan , Chung Foong Tan , Jae Gon Lee , Elgin Quek , Purakh Raj Verma
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/788
Abstract:
A method for forming a device is presented. A substrate prepared with a feature having first and second adjacent surfaces is provided. A device layer is formed on the first and second adjacent surfaces of the feature. A first portion of the device layer over the first adjacent surface includes nano-crystals, whereas a second portion of the device layer over the second adjacent surface is devoid of nano-crystals.
Public/Granted literature
- US20110156121A1 MEMORY CELL WITH IMPROVED RETENTION Public/Granted day:2011-06-30
Information query
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