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US08530318B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same 有权
使用在底部导体上形成的选择性制造的碳纳米管可逆电阻切换元件的记忆单元及其形成方法

  • Patent Title: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
  • Patent Title (中): 使用在底部导体上形成的选择性制造的碳纳米管可逆电阻切换元件的记忆单元及其形成方法
  • Application No.: US12410789
    Application Date: 2009-03-25
  • Publication No.: US08530318B2
    Publication Date: 2013-09-10
  • Inventor: April D. Schricker
  • Applicant: April D. Schricker
  • Applicant Address: US CA Milpitas
  • Assignee: SanDisk 3D LLC
  • Current Assignee: SanDisk 3D LLC
  • Current Assignee Address: US CA Milpitas
  • Agency: Dugan & Dugan, PC
  • Main IPC: H01L21/8222
  • IPC: H01L21/8222
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
Abstract:
In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”) material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium (“Si/Ge”), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
Abstract(Chinese):

在一些方面，提供一种制造存储单元的方法，其包括：（1）在衬底之上制造第一导体; （2）通过以下步骤选择性地制造第一导体上方的碳纳米管（“CNT”）材料：（a）在第一导体上制造CNT籽晶层，其中CNT籽晶层包括硅 - 锗（“Si / Ge” ），（b）平坦化沉积的CNT籽晶层的表面，和（c）在CNT籽晶层上选择性地制造CNT材料; （3）在CNT材料之上制造二极管; 和（4）在二极管上方制造第二导体。 提供了许多其他方面。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222 ......双极工艺
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